Reaserchers unveil method for the fabrication of graphene-based FET

Reaserchers unveil method for the fabrication of graphene-based FET:

Reaserchers at the Ulsan National Institute of Science and Technology (UNIST in Korea) unveiled a method for the mass production of boron/nitrogen co-doped graphene nanoplatelets, which led to the fabrication of a graphene-based field-effect transistor (FET).

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